William B. Shockley: Difference between revisions
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[[File:shockley.jpg|thumb|250px| | [[File:shockley.jpg|thumb|250px|William B. Shockley]] | ||
==Personal Life== | ==Personal Life== | ||
===Early Life=== | ===Early Life=== | ||
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Wiliam died of prostate cancer in 1989. Sadly, his death was not known by family members (excluding his wife at the time, Emmy) until printed in media. | Wiliam died of prostate cancer in 1989. Sadly, his death was not known by family members (excluding his wife at the time, Emmy) until printed in media. | ||
== | ==Scientific Contributions== | ||
Shockley lead a solid state physics group formed by Bell Laboratories in 1945. Their purpose was to find a solid state alternative to fragile glass vacuum tube amplifiers. Many of their early attempts had failed but, had drew them closer to success. The climax of their work was when they began to surround point contacts between the conducting wires and semiconductor with electrolytes. Shockley advised putting a voltage on a droplet of glycol borate placed across a P-N junction, which is an interface between a p-type and n-type semiconductor. | |||
===Junction Transistor=== | |||
=== | |||
==Connectedness== | ==Connectedness== |
Revision as of 16:15, 5 December 2015
Claimed by itsphysics
Personal Life
Early Life
William B. Shockley was born in London, England, on February 13th, 1910. His father, William Hillman Shockley, who was a mining engineer, was married to Mary (née Bradford), who was a US deputy mining surveyor. His family moved to the United States in 1913, where William B. Shockley earned his B.Sc. degree at California Institute of Technology in 1932. He later earned his Ph.D. in 1936 at Massachusetts Institute of Technology and submitted a thesis called Electronic Bands in Sodium Chloride. Later that year, William joined the Bell Telephone Laboratories, working with a group that was lead by Dr. C.J. Davisson. While working for Bell Laboratories, he published many works on solid state physics. He also got his first patent in 1938 for "Electron Discharge Device" (electron multipliers).
Career
William became very involved when WWII broke out. He began to work with radar research at Bell Laboratories in New York. He later left in 1942 and became a research director of the Anti-Submarine Warfare Operations Group. As research director, he devised many methods to counter submarine tactics. On October 17, 1946, William was rewarded the Medal of Merit by the Secretary of War Robert Patterson. From 1954 to 1955, he was research and deputy director of the Weapons System Evaluation Group in the Defense Department. His works was mainly centered towards energy bands in solids, disorder and order in alloys, vacuum tubes, transistors, and so on.
Family Life
Shockley was married twice. First, with Jean (née Bailey), who bore three children, and second with Emmy Lanning.
Death
Wiliam died of prostate cancer in 1989. Sadly, his death was not known by family members (excluding his wife at the time, Emmy) until printed in media.
Scientific Contributions
Shockley lead a solid state physics group formed by Bell Laboratories in 1945. Their purpose was to find a solid state alternative to fragile glass vacuum tube amplifiers. Many of their early attempts had failed but, had drew them closer to success. The climax of their work was when they began to surround point contacts between the conducting wires and semiconductor with electrolytes. Shockley advised putting a voltage on a droplet of glycol borate placed across a P-N junction, which is an interface between a p-type and n-type semiconductor.
Junction Transistor
Connectedness
Transistors are one of the most important components in electronic devices. To see the origins of the transistor and its development is something many can appreciate. William's story is very personal as well. From being discredited to inventing a better transistor, William shows the a story of determination, innovation, and perseverance.
History
Who: William B. Shockley What: Junction Transistor When: 1949 Where: Outside of Bell Laboratories Why: Majority of transistors in the 1960's used the sandwich structure of the junction transistor
See also
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Further reading
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External links
References
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