Electron Mobility: Difference between revisions

Revision as of 23:02, 5 December 2015

claimed by djohnston35

The Main Idea

Electron mobility is the characteristic of a metal or semiconductor, which predicts the velocity at which an electron will travel when influenced by an electric field.

Electron mobility may also refer to a similar occurrence of charged particles in a liquid.

Note: Hole mobility is not the same concept as electron mobility and the numbers for these material properties will be different.

The drift velocity of electrons moving through a material, as a response to an electric field is designated as v, electron velocity.

A Mathematical Model

The electron mobility is defined in units of cm^2/(V·s).

Mobility μ is a factor that impacts drift speed v through materials affected by an electric field E.

Conductivity σ in terms of electron mobility.

Current I in terms of charge density n, area of material A, charge q, and drift speed.

Examples

Connectedness

Higher mobility typically leads to better performance for semiconductors.

The electron mobility varies for different materials. A higher electron mobility will allow faster current flow and will allow electrical devices to be turned on and off more quickly. Electron mobility of Silicon is 1400 cm^2/Vs Comparatively, indium antimonide has a mobility of 77,000 cm^2/Vs At the University of Maryland, graphene has been recorded to have a mobility of 200,000 cm^2/Vs, and is also extremely thin. (How thin? Graphene is composed of a single layer of carbon atoms!) Such a combination could be extremely useful to the electronics industry, with electrons traveling 100 times faster in much less volume.

Electron mobility through a material is affected by external variables such as temperature. Increases in temperature will decrease the electron mobility by increasing frequency of collisions between electrons.

References

This section contains the the references you used while writing this page

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 claimed by djohnston35
-Short Description of Topic
 ==The Main Idea==
+Electron mobility is the characteristic of a metal or semiconductor, which predicts the velocity at which an electron will travel when influenced by an electric field.
+Electron mobility may also refer to a similar occurrence of charged particles in a liquid.
-State, in your own words, the main idea for this topic
+Note: Hole mobility is not the same concept as electron mobility and the numbers for these material properties will be different.
+The drift velocity of electrons moving through a material, as a response to an electric field is designated as v, electron velocity.
 ===A Mathematical Model===
+The electron mobility is defined in units of cm^2/(V·s).
-What are the mathematical equations that allow us to model this topic.  For example <math>{\frac{d\vec{p}}{dt}}_{system} = \vec{F}_{net}</math> where '''p''' is the momentum of the system and '''F''' is the net force from the surroundings.
+Mobility μ is a factor that impacts drift speed v through materials affected by an electric field E.
+[[File:Example.jpg]]
-===A Computational Model===
+Conductivity σ in terms of electron mobility.
+[[File:Example.jpg]]
-How do we visualize or predict using this topic. Consider embedding some vpython code here [https://trinket.io/glowscript/31d0f9ad9e Teach hands-on with GlowScript]
+Current I in terms of charge density n, area of material A, charge q, and drift speed.
+[[File:Example.jpg]]
 ==Examples==
-Be sure to show all steps in your solution and include diagrams whenever possible
-===Simple===
+==Connectedness==
-===Middling===
-===Difficult===
-==Connectedness==
+Higher mobility typically leads to better performance for semiconductors.
-#How is this topic connected to something that you are interested in?
-#How is it connected to your major?
-#Is there an interesting industrial application?
-==History==
+The electron mobility varies for different materials. A  higher electron mobility will allow faster current flow and will allow electrical devices to be turned on and off more quickly.
+Electron mobility of Silicon is 1400 cm^2/Vs
+Comparatively, indium antimonide has a mobility of 77,000 cm^2/Vs
+At the University of Maryland, graphene has been recorded to have a mobility of 200,000 cm^2/Vs, and is also extremely thin. (How thin? Graphene is composed of a single layer of carbon atoms!) Such a combination could be extremely useful to the electronics industry, with electrons traveling 100 times faster in much less volume.
-Put this idea in historical context. Give the reader the Who, What, When, Where, and Why.
+Electron mobility through a material is affected by external variables such as temperature. Increases in temperature will decrease the electron mobility by increasing frequency of collisions between electrons.
 == See also ==
 Are there related topics or categories in this wiki resource for the curious reader to explore?  How does this topic fit into that context?
-===Further reading===
-Books, Articles or other print media on this topic
-===External links===
-[http://www.scientificamerican.com/article/bring-science-home-reaction-time/]
 ==References==